2025, Layer- and Charge-State Dependent Magnetic Proximity Modulation of Valley Excitons in MoS2/CrBr3 Heterostructures, Small.

2025, Layer- and Charge-State Dependent Magnetic Proximity Modulation of Valley Excitons in MoS₂/CrBr₃ Heterostructures, Small.

Abstract:

The manipulation of valley degrees of freedom in transition metal dichalcogenides (TMDCs) via the magnetic proximity effect (MPE) is key to advancing next-generation quantum and optoelectronic technologies. However, a comprehensive understanding of how MPE depends on layer configuration and excitonic charge state remains elusive. Here, we report a systematic study of MPE-induced magneto-optical responses in monolayer and bilayer MoS₂ interfaced with few and bulk CrBr₃. Photoluminescence spectroscopy reveals a charge state dependent MPE, consistent with a spin-aligned interfacial charge transfer mechanism. Notably, CrBr₃ introduces significant Zeeman splitting in 1L-MoS₂, with a large splitting of 1.49 meV at zero field, consistent with the theoretical calculation of 1.8 meV. Under high magnetic fields, the g-factors of neutral excitons and trions are enhanced by factors of ~2.3 and ~1.8, respectively. In contrast, bilayer MoS₂ exhibits a weaker response, highlighting the diminished interfacial exchange coupling in multilayer systems. Our findings demonstrate a robust MPE in CrBr₃-based heterostructures and provide critical insights into layer and charge state dependent proximity effects, paving the way for tailored valleytronic functionalities in 2D materials.

Keywords: MoS₂/CrBr₃, magnetic proximity effect, valley Polarization, g-factor.

Link: https://onlinelibrary.wiley.com/doi/10.1002/smll.202508423

Small - 2025 - Li - Layer‐ and Charge‐State Dependent Magnetic Proximity Modulation of Valley Excitons in MoS2 CrBr3.pdf