2025, Ferroelectric Control of Interlayer Excitons Enables Nonvolatile Quantum Photonic Memory in 2D Heterostructures, ACS Nano.
2025, Ferroelectric Control of Interlayer Excitons Enables Nonvolatile Quantum Photonic Memory in 2D Heterostructures, ACS Nano.
Abstract:
Interlayer excitons in van der Waals heterostructures of monolayer transition metal dichalcogenides possess long lifetimes and pronounced out-of-plane dipole moments, offering a promising platform for nonvolatile quantum photonic memory and reconfigurable valleytronic logic. However, conventional tuning approaches—such as electrostatic gating, strain engineering, and chemical doping—are typically volatile, weakly tunable, or non-retentive, limiting the realization of reliable exciton-based information storage. Here, we demonstrate robust, nonvolatile control of interlayer excitons in MoSe₂/WSe₂/CuInP₂S₆ (CIPS) heterostructures via ferroelectric modulation. The bistable polarization states of the CIPS layer, arising from reversible Cu⁺ ion displacement under external bias, induce persistent in-situ P-type and N-type doping at the MoSe₂/WSe₂ interface. This built-in polarization field enables deterministic modulation of exciton energy, photoluminescence intensity, linewidth, and valley polarization—all retained under high magnetic fields conditions. Leveraging this mechanism, we realize a reprogrammable excitonic memory element with optically addressable binary logic states. Our findings establish ferroelectric control as a scalable and nonvolatile strategy for excitonic device engineering, opening avenues for electrically programmable quantum optoelectronic systems based on two-dimensional materials.
Keywords: interlayer exciton, CuInP₂S₆, ferroelectric, nonvolatile, logic devices.
Link: https://pubs.acs.org/doi/full/10.1021/acsnano.5c11442
